美国的产品责任法主要是州法,而不是联邦统一的立法。各州都有自己的产 品责任法,而且各有差异,为了统一各州的产品责任法,美国商务部在1979年 1月提出了一项《统一产品责任法(草案)》(Draft Uniform ProductLiability Law),供各州采用,但至今尚未被各州采纳

TAX RESEARCH (1of2) Types of tax research Tax research process How facts affect tax consequences Sources of tax law and value Tax services

Learning Objectives Describe the steps in the tax research process Explain how the facts affect the tax results Identify the sources of tax law and understand the authoritative value of each Use the tax services to research an issue

11-1 Classifications of Magnetic Media Magnetic Permeability磁介质的分类磁导率 11-2 Molecular Theory of Paramagnetism& Diamagnetism顺磁质和抗磁质磁化的分子理论 11-3 Ampere's Law in the magnetic matter and magnetic intensity H磁介质中的安培环路定理和磁场强度H 11-4 Ferromagnetism铁磁质

§9-1 Conductors Elecrostatic Induction 静电场中的导体 静电感应 §9-3 Dielectrics 电介质的极化 §9-4 Gauss’ Law in Dielectric 电介质中的电场 Electric Displacement 有电介质时的高斯定理 电位移 §9-5 Energy in Electric Field 电场的能量 §9-2 Capacitance 电容器 电容器的并联和串联

本大纲是根据1999年9月法律出版社出版的《国际私法学》(主编:赵生祥、副 主编:刘想树)而编著。《国际私法》总授课时数60学时、实践课学时10学时。学 生可以根据本大纲掌握《国际私法》的基本原理和实践运用。参加编写本大纲的人员有 刘想树、赵生样、宋渝玲、禹华英、裴普。由于时间有限,大纲难免有疏漏之处,请读 者批评指正

Lecture Outline Introduction to queuing systems Conceptual representation of queuing systems Codes for queuing models Terminology and notation Little's Law and basic relationships Birth-and-death processes The M/M/1 queuing system State transition diagrams Steady-state probabilities

1. Concepts of Number System and their conversion 2. Boolean Algebra 3. Moore’s Law 4. 科技英语中数学公式的读法

Background Information Murphy's law is a popular adage in Western culture, which roughly states that things will go wrong in a technical system. It is often roughly stated as\ if anything can go wrong,it willi

Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)