Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

宁波工程学院：2022版电子科学与技术专业人才培养方案（专升本）

4.1多谐振荡器 4.2单稳态触发器 4.3施密特触发器

5.1概述 5.2D/A转换器 5.3A/D转换器

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity

TOSHIBA Semiconductor Company Discrete semiconductor Division 2003 Dec DP054001101

9.1非正弦 周期信号 9.3 非正弦 周期信号的 有效值、平均值 和平均功率

11.2 均匀传输 线的正弦稳态 响应的方程式 11.1 分布 参数电路 的概念 11.3 均匀传输 线上的波和 传播特性 11.4 终端接有 负载的传输线