Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET
Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource
(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003
DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device
SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency
Patented free-floating silicon technology Low on-state and switching losses Designed for traction, energy and industrial applications Optimum power handling capability Blocking
