一、例题精解 【例题2.1】在图2.2所示方框图中,N是一线性无源网络。当U1=1V,2=1A时,U3=0V:当U1=10V,2=0A时,U3=1V.试求当U1=0V,I2=10A时,U3=? 【解】应用叠加原理计算,则U3=U3+U3。其中3=AU是U1单独作用时的分量,U3=B2是l2单独作用时的分量,即

A Brain-Friendly Guide《Head First Ajax》（PDF电子书，共12个Chapter）

一、例题精解 【例题1.1】在图1.1中,在开关S断开和闭合的两种情况下,试求A点的电位。 【解】(1)开关S断开时

Diffusion: Read Plummer Chap. 7, sections 7.1-7.4,, 7.53, 7.5.8 Show that c(zt) Wroexpfzla)I,with a=2VDf, is a solution to Fick's second law of diffusion. ac(z, t) dc(zt) 2. a) What is the intrinsic carrier concentration in Si at 1100 C? b) Calculate the effective diffusivity (including first-order, charged-vacancy corrections)for As impurities in Si at 1100 C for two cases: 1)CAs=10 cm and ii)

I Classification of Rearrangement Reactions() II Nucleophilic rearrangement() 1 Wagner-Meerwein rearrangement( 2 Pinacolic Rearrangement 3 a-ethandione Rearrangement 4 Beckmann Rearrangement 5 Baeyer-Villiger Rearrangement

1.(Plummer 10.3)In a certain process, it is desired that the pitch of metal lines be equal to or less than 1.Omm(the pitch equals one metal linewidth plus one spacing between metal lines, measured at top of features). Assume that the metal linewidth and spacing are

I. Plot resolution and depth of field as a function of exposure wavelength for a projection aligner with 100nm< A <500nm. Assume NA=0.26. Recalculate on the same plot for NA=0.41. Discuss the implication of these plots for the technologist that must manufacture transistors with 0.5 um

a)非均匀量化 非均匀量化是一种在整个动态范围内量化间隔不相等的量化

以酸处理红辉沸石为原料,采用水热反应晶化合成工艺,合成出了质量较高的4A沸石产品。在大量实验基础上,利用X射线衍射分析、扫描电镜观察等系统地研究了反应过程。在整个反应过程中,酸处理红辉沸石和铝酸钠不断溶解,固相的SiO2和Al2O3不断转化为液相的SiO2和Al2O3。这表明,A型沸石的形成是以液相各组分浓度的过饱和为动力,以液相为传质的,因此为液相转化机理

采用自制的装置,通过阳极弧光放电法制备了内包覆Fe/Co磁性纳米粒子的碳纳米管(CNTs).利用透射电子显微镜(TEM)、拉曼散射光谱和X射线衍射(XRD)对其进行表征,用振动样品磁强计(VSM)检测得到其磁学性能参数.TEM测试表明,CNTs杂质少,管径均匀一致,CNTs内包覆的物质均匀、连续,且为Fe/Co粒子.磁学性质的测量表明,CNTs的磁学性能较包覆前有了很大的改善,其比饱和磁化强度σs为17.30A·m2·kg-1,比剩余磁化强度σr为3.96A·m2·kg-1,矫顽力Hc为31521.60A·m-1