点击切换搜索课件文库搜索结果(11345)
文档格式:PPT 文档大小:425.5KB 文档页数:6
一、什么是多径效应? 移动通信电波传播最具特色的现象是多径 衰落,或称多径效应。无线电波在传输过程中会 受到地形、地物的影响而产生反射、绕射、散射 等,从而使电波沿着各种不同的路径传播,这称 为多径传播。由于多径传播使得部分电波不能到 达接收端,而接收端接收到的信号也是在幅度、 相位、频率和到达时间上都不尽相同的多条路径 上信号的合成信号,因而会产生信号的频率选择 性衰落和时延扩展等现象,这些被称为多径衰落 或多径效应
文档格式:PDF 文档大小:105.23KB 文档页数:9
VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:
文档格式:PDF 文档大小:219.23KB 文档页数:6
DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device
文档格式:PDF 文档大小:499KB 文档页数:14
(1) Hole particle current from E to B (2)Electron particle current from B to E (3)Recombination current in B (4) Hole particle current originating in E and reaching C (5)Reverse electron particle current from c to B (6) Reverse hole particle current from b to c (What is difference between \current\ and\particle current ? OE F Schubert, Rensselaer Polytechnic Institute, 2003
文档格式:PDF 文档大小:175.28KB 文档页数:8
The TA8025P TA8025F is an IC designed for making the esigneo or ma output signal from electromagnetic pick up sensor and etc.... waveform-shaping. The Vth of input has hysteresis that is TA8025P division value between peak voltage of input signal and. Features Input frequency
文档格式:PDF 文档大小:149.22KB 文档页数:9
Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating
文档格式:PDF 文档大小:444.05KB 文档页数:17
 基本介绍  电催化CO2还原研究概况  电催化CO2在单晶铜表面还原合成二碳产物  其他的电还原催化剂  总结与展望
文档格式:PDF 文档大小:145.86KB 文档页数:9
Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity
文档格式:PDF 文档大小:69.01KB 文档页数:12
Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource
文档格式:PDF 文档大小:1.25MB 文档页数:41
实训项目一 安全用电 实训项目二 电子元器件的识别与测试 实训项目三 锡焊技术 实训项目四 常用电子仪器仪表使用 实训项目五 多路输出稳压电源及充电器的设计与焊接调试 实训项目六 放大器和积分器的设计仿真及安装调试 实训项目七 表面安装技术(SMT) 实训项目八 SMT 产品安装工艺 实训项目九 电子实训产品 实训项目十 PCB 印刷电路板的设计与制作
首页上页898899900901902903904905下页末页
热门关键字
搜索一下,找到相关课件或文库资源 11345 个  
©2008-现在 cucdc.com 高等教育资讯网 版权所有