74HC245;74HCT245 Octal bus tranceiver;3-state Rev.03-31 January 2005 Product data sheet■ 1.General description Iwei26rST6eaandeaieage9eac2a59a8 7"c274C246ssmarow74c84a.74icTe0buase 2.Features mOctal bidirectional bus interface Non-inverting 3-state outputs Multiple package options mplies with JEDEC standard no.7A ◆ ESD pro HBM EIA/JESD22-A114-B exceeds 2000V MM EIA/JESD22-A115-Ae eds 200 V Specified from-40C to+ -40℃to+125℃ 3.Quick reference data -25C-6ns Symbol aramotor Conditions Min Typ Max Unit 4HC24 7 An to Bn or Bn to An 8ecg 9 inout capacitance 3.5· input/output capacitance 10. Cpo Vi=GND to Vcc[ 30. anaceepe Type 74HCT245 IPHL,tPLH An to Bn or Bn to An 8c ns PHILIPS
1. General description The 74HC245; 74HCT245 is a high-speed Si-gate CMOS device and is pin compatible with Low-Power Schottky TTL (LSTTL). The 74HC245; 74HCT245 is an octal transceiver featuring non-inverting 3-state bus compatible outputs in both send and receive directions. The 74HC245; 74HCT245 features an output enable input (OE) for easy cascading and a send/receive input (DIR) for direction control. OE controls the outputs so that the buses are effectively isolated. The 74HC245; 74HCT245 is similar to the 74HC640; 74HCT640 but has true (non-inverting) outputs. 2. Features ■ Octal bidirectional bus interface ■ Non-inverting 3-state outputs ■ Multiple package options ■ Complies with JEDEC standard no. 7A ■ ESD protection: ◆ HBM EIA/JESD22-A114-B exceeds 2000 V ◆ MM EIA/JESD22-A115-A exceeds 200 V ■ Specified from −40 °C to +85 °C and from −40 °C to +125 °C 3. Quick reference data 74HC245; 74HCT245 Octal bus tranceiver; 3-state Rev. 03 — 31 January 2005 Product data sheet Table 1: Quick reference data GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns. Symbol Parameter Conditions Min Typ Max Unit Type 74HC245 tPHL, tPLH propagation delay An to Bn or Bn to An CL = 15 pF; VCC =5V - 7 - ns CI input capacitance - 3.5 - pF CI/O input/output capacitance - 10 - pF CPD power dissipation capacitance per transceiver VI = GND to VCC [1] - 30 - pF Type 74HCT245 tPHL, tPLH propagation delay An to Bn or Bn to An CL = 15 pF; VCC =5V - 10 - ns
Philips Semiconductors 74HC245:74HCT245 ■ Octal bus tranceiver;3-state Table 1: ce data.continued Symbol Conditions Min Typ Max Unit input capacitance 3.5 pF input/output capacitance 10 DF power dissipation 30 pF [1]Cppis used to determine the dynamic power dissipation(Pp in W): xVcc2xxN+ΣtCL×Vec2xo)where =output frequency in MHz nce in pF: tching: Σ(CL×Vcc2xf)=sum of outputs 4.Ordering information Table 2: Ordering information Type number Package Temperature range Name Description Version 74HC245N 40Cto+125C DIP20 plastic dual in-line package:20 leads (300 mil) S0T146-1 74HC245D -40Ct0+125C S020 S0T163-1 74HC245PW 40℃t0+125℃ TSSOP20 74HC245DB 40Ct0+125C SSOP20 all outline package:20 leads S0T339.1 74HC245BQ 409C10+125C S0T764-1 74HCT245N 409Ct0+1259CD1p20 plastic dual in-line package:20 leads (300 mil)SOT146-1 74HCT245D 40℃t0+125℃S020 lastic small outtine package:20 leads S0T163-1 body width 7.5 mm 74HCT245PW 40Cto+125C TSSOP20 hhrink mall oulin package:0eads:T360-1 74HCT245DB 40℃10+125℃ SSOP20 utline package:20 leads S0T3391 74HCT245BQ -40'C to +125C DHVQFN20 plastic dual-in-line compatible thermal enhanced SOT764-1 a25.Mns Rev.03-31 January 2005 20f22
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 2 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state [1] CPD is used to determine the dynamic power dissipation (PD in µW): PD = CPD × VCC2 × fi × N + ∑ (CL × VCC2 × fo) where: fi = input frequency in MHz; fo = output frequency in MHz; CL = output load capacitance in pF; VCC = supply voltage in V; N = number of inputs switching; ∑ (CL × VCC2 × fo) = sum of outputs. 4. Ordering information CI input capacitance - 3.5 - pF CI/O input/output capacitance - 10 - pF CPD power dissipation capacitance per transceiver VI = GND to VCC − 1.5 V [1] - 30 - pF Table 1: Quick reference data .continued GND = 0 V; Tamb = 25 °C; tr = tf = 6 ns. Symbol Parameter Conditions Min Typ Max Unit Table 2: Ordering information Type number Package Temperature range Name Description Version 74HC245N −40 °C to +125 °C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1 74HC245D −40 °C to +125 °C SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 74HC245PW −40 °C to +125 °C TSSOP20 plastic thin shrink small outline package; 20 leads; body width 4.4 mm SOT360-1 74HC245DB −40 °C to +125 °C SSOP20 plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1 74HC245BQ −40 °C to +125 °C DHVQFN20 plastic dual-in-line compatible thermal enhanced very thin quad flat package no leads; 20 terminals; body 2.5 × 4.5 × 0.85 mm SOT764-1 74HCT245N −40 °C to +125 °C DIP20 plastic dual in-line package; 20 leads (300 mil) SOT146-1 74HCT245D −40 °C to +125 °C SO20 plastic small outline package; 20 leads; body width 7.5 mm SOT163-1 74HCT245PW −40 °C to +125 °C TSSOP20 plastic thin shrink small outline package; 20 leads; body width 4.4 mm SOT360-1 74HCT245DB −40 °C to +125 °C SSOP20 plastic shrink small outline package; 20 leads; body width 5.3 mm SOT339-1 74HCT245BQ −40 °C to +125 °C DHVQFN20 plastic dual-in-line compatible thermal enhanced very thin quad flat package no leads; 20 terminals; body 2.5 × 4.5 × 0.85 mm SOT764-1
Philips Semiconductors 74HC245:74HCT245 Octal bus tranceiver;3-state 5.Functional diagram 21018 42, 口1d 216 D27 8 16 64 8 9 111 Fig1.Logic symbol Fig 2.IEC logic symbol Rev.03-31 January 2005 30f2
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 3 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state 5. Functional diagram Fig 1. Logic symbol Fig 2. IEC logic symbol 2 1 DIR 18 19 B0 B1 B2 B3 B4 B5 B6 B7 3 17 4 16 5 15 6 14 7 13 8 12 9 A0 A1 A2 A3 A4 A5 A6 A7 11 OE mna174 3 17 1 19 2 1 4 16 5 15 6 14 7 13 8 12 9 11 18 G3 3EN1 3EN2 2 mna175
Philips Semiconductors 74HC245:74HCT245 Octal bus tranceiver;3-state 6.Pinning information 6.1 Pinning A02 50 25 ran ent top view (1 to this pin or inpu Fig 4.Pin configuration DHVQFN20 6.2 Pin description Table3: Pin description Symbo Pin Description DIR direction control 2 data input/output 3 data input/output 4 data input/output data input/output data inpuoupu ata inpuo data inputo data input/output GND 10 ground (0V) 11 data input/output 名 12 data input/output 13 data input/output B4 14 data input/output B3 15 data input/output 16 data inpuoupu Rev.03-31 January 2005 4o2
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 4 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state 6. Pinning information 6.1 Pinning 6.2 Pin description (1) The die substrate is attached to this pad using conductive die attach material. It can not be used as supply pin or input Fig 3. Pin configuration DIP20, SO20, SSOP20 and TSSOP20 Fig 4. Pin configuration DHVQFN20 245 DIR VCC A0 OE A1 B0 A2 B1 A3 B2 A4 B3 A5 B4 A6 B5 A7 B6 GND B7 001aac431 1 2 3 4 5 6 7 8 9 10 12 11 14 13 16 15 18 17 20 19 001aac432 245 GND(1) Transparent top view B6 A6 A7 B5 A5 B4 A4 B3 A3 B2 A2 B1 A1 B0 A0 OE GNDB7 DIR VCC 9 12 8 13 7 14 6 15 5 16 4 17 3 18 2 19 1011 1 20 terminal 1 index area Table 3: Pin description Symbol Pin Description DIR 1 direction control A0 2 data input/output A1 3 data input/output A2 4 data input/output A3 5 data input/output A4 6 data input/output A5 7 data input/output A6 8 data input/output A7 9 data input/output GND 10 ground (0 V) B7 11 data input/output B6 12 data input/output B5 13 data input/output B4 14 data input/output B3 15 data input/output B2 16 data input/output
Philips Semiconductors 74HC245:74HCT245 Octal bus tranceiver;3-state Table 3:Pin description.conned Symbol Pin Description B1 17 data input/output 18 data inpu/oupu enat input(active LOW) Vcc 20 supply voltage 7.Functional description 7.1 Function table Table 4:Function table Input Input/output OE DIR An Bn A=B input H input B=A H Z=high-impedance OFF-state 8.Limiting values Table 5: lute Maximum Rating System().Voltages are referenced to GND (ground 0 V). Symbol Parameter Conditions Min Max Unit Vce supply voltage -0.5+7V inout diode current Vi<-0.5 V or Vi Vcc +0.5V 20 mA output diode current .+20mA 6 output source or sink Vo =-0.5 V to Vcc +0.5 V 、 35 mA lcc.lGND Vcc or GND ±70 mA storage temperature -65+150©℃ total power dissipation DIP20 package 750mW 500mW DHVOFN20 packages ages:abo Pio derates linearly with 4.5 mWK 20. Rev.03-31 January 2005 5of22
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 5 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state 7. Functional description 7.1 Function table [1] H = HIGH voltage level; L = LOW voltage level; X = don’t care; Z = high-impedance OFF-state. 8. Limiting values [1] For DIP20 packages: above 70 °C, Ptot derates linearly with 12 mW/K. For SO20 packages: above 70 °C, Ptot derates linearly with 8 mW/K. For SSOP20 and TSSOP20 packages: above 60 °C, Ptot derates linearly with 5.5 mW/K. For DHVQFN20 packages: above 60 °C, Ptot derates linearly with 4.5 mW/K. B1 17 data input/output B0 18 data input/output OE 19 output enable input (active LOW) VCC 20 supply voltage Table 3: Pin description .continued Symbol Pin Description Table 4: Function table [1] Input Input/output OE DIR An Bn L L A = B input L H input B = A HXZZ Table 5: Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Max Unit VCC supply voltage −0.5 +7 V IIK input diode current VI VCC + 0.5 V - ±20 mA IOK output diode current VO VCC + 0.5 V - ±20 mA IO output source or sink current VO = −0.5 V to VCC + 0.5 V - ±35 mA ICC, IGND VCC or GND current - ±70 mA Tstg storage temperature −65 +150 °C Ptot total power dissipation [1] DIP20 package - 750 mW SO20, SSOP20, TSSOP20 and DHVQFN20 packages - 500 mW
Philips Semiconductors 74HC245:74HCT245 ■ Octal bus tranceiver;3-state 9.Recommended operating conditions aramete Min Typ Max Unit Type 74HC245 supply voltage 20 5.06.0V input voltage 0 Vo output voltage 0 trtr input rise and fall Vcc 2.0 V 1000ns times Vcc =4.5V 6.0500ns Vcc =6.0V 400ng ambint temperature 40 +125℃ supply voltage 5.05.5 input voltage Vo output voltage input rise and fall Vcc =4.5 V 6.0 500 ns Tamb ambient temperature 40 +125 10.Static characteristics Static characteristics type 74HC245 are reterenced to GND (ground=V). Symbol Conditions Typ Max Unit Tamb25℃ VIH HIGH-level input voltage Vcc =2.0 V 1.5 1.2- Vcc=4.5V 3.152.4 Vcc=6.0V 4.2 3.2 N LOW-level input voltage Vcc 2.0V 0.80.5V Vcc=4.5V 2.11.35V Voc=6.0V 2.81.8V HIGH-level output voltage Vi=ViH or ViL 20 HA:Vcc=2.0V 2.0 l0=-20AVcc=45 95 lo=-20 HA;Vcc 6.0\ 6.0- lo =-6.0 mA;Vcc 4.5 V 3.984.32· lo=-7.8 mA:Vcc=6.0 V 5.485.81 LV 2006.Al righ Rev.03-31 January 2005
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 6 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state 9. Recommended operating conditions 10. Static characteristics Table 6: Recommended operating conditions Symbol Parameter Conditions Min Typ Max Unit Type 74HC245 VCC supply voltage 2.0 5.0 6.0 V VI input voltage 0 - VCC V VO output voltage 0 - VCC V tr, tf input rise and fall times VCC = 2.0 V - - 1000 ns VCC = 4.5 V - 6.0 500 ns VCC = 6.0 V - - 400 ns Tamb ambient temperature −40 - +125 °C Type 74HCT245 VCC supply voltage 4.5 5.0 5.5 V VI input voltage 0 - VCC V VO output voltage 0 - VCC V tr, tf input rise and fall times VCC = 4.5 V - 6.0 500 ns Tamb ambient temperature −40 - +125 °C Table 7: Static characteristics type 74HC245 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Tamb = 25 °C VIH HIGH-level input voltage VCC = 2.0 V 1.5 1.2 - V VCC = 4.5 V 3.15 2.4 - V VCC = 6.0 V 4.2 3.2 - V VIL LOW-level input voltage VCC = 2.0 V - 0.8 0.5 V VCC = 4.5 V - 2.1 1.35 V VCC = 6.0 V - 2.8 1.8 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 2.0 V 1.9 2.0 - V IO = −20 µA; VCC = 4.5 V 4.4 4.5 - V IO = −20 µA; VCC = 6.0 V 5.9 6.0 - V IO = −6.0 mA; VCC = 4.5 V 3.98 4.32 - V IO = −7.8 mA; VCC = 6.0 V 5.48 5.81 - V
Philips Semiconductors 74HC245;74HCT245 ■ Octal bus tranceiver;3-state Symbol Paramoter Min Typ Max Unit LOW-level output voltage Vi=ViH or ViL lo=20 uA:Vcc 2.0V 0 0.1 V lo=20 uA:Vcc 4.5V 0 0.1V lo=20 uA:Vce=6.0V 0 0.1V lo 6.0 mA:Vcc 4.5 V 0.150.26V lo=7.8 mA:Vcc 6.0V 0.160.26V input leakage current Vi=Vcc or GND:Voc=6.0 V 40.1 o2 OFF-state output current 0.5 quiescent supply current 8.0 input capacitance Cvo input/output capacitance 10 pF Tmb=_40Cto+85°C HIGH-level input voltage Vcc 2.0V 1.5 Vcc=4.5V 3.15 Voc=6.0V 42 LOW-level input voltage Vcc 2.0V 05 Vec=4.5V 35 1.8 > VoH HIGH-level output voltage VCC =6.0V lo=-20 HA;Vcc=2.0 V 9 lo =-20 uA:Vcc 4.5 V 4.4 lo =-20 uA:Vcc 6.0V 5.9 lo =-6.0 mA:Vcc =4.5V 3.84 lo =-7.8 mA:Vcc =6.0V 534 LOW-level output voltage Vi=Viu or Vi lo 20 uA:Vcc 2.0 V 0.1 0 20 A:Vcc= lo=20 HA:Vcc=6.0 lo 6.0 mA:Vcc=4.5V 03 lo =7.8 mA;Vcc =6.0V 0.33V input leakage current Vi=Vcc or GND:Voc =6.0V ±1.0 loz OFF-state output current VVo-Vcc or GND 5.0 HA quiescent supply current 80 T6mb=-40℃to+125C HIGH-level input votage Voc =2.0 V Vcc=4.5V 315 Vcc=6.0 v 42 006.Al rich Rev.03-31 January 2005 70f2
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 7 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 2.0 V - 0 0.1 V IO = 20 µA; VCC = 4.5 V - 0 0.1 V IO = 20 µA; VCC = 6.0 V - 0 0.1 V IO = 6.0 mA; VCC = 4.5 V - 0.15 0.26 V IO = 7.8 mA; VCC = 6.0 V - 0.16 0.26 V ILI input leakage current VI = VCC or GND; VCC = 6.0 V - - ±0.1 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 6.0 V - - ±0.5 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 8.0 µA CI input capacitance - 3.5 - pF CI/O input/output capacitance - 10 - pF Tamb = −40 °C to +85 °C VIH HIGH-level input voltage VCC = 2.0 V 1.5 - - V VCC = 4.5 V 3.15 - - V VCC = 6.0 V 4.2 - - V VIL LOW-level input voltage VCC = 2.0 V - - 0.5 V VCC = 4.5 V - - 1.35 V VCC = 6.0 V - - 1.8 V VOH HIGH-level output voltage VI = VIH or VIL IO = −20 µA; VCC = 2.0 V 1.9 - - V IO = −20 µA; VCC = 4.5 V 4.4 - - V IO = −20 µA; VCC = 6.0 V 5.9 - - V IO = −6.0 mA; VCC = 4.5 V 3.84 - - V IO = −7.8 mA; VCC = 6.0 V 5.34 - - V VOL LOW-level output voltage VI = VIH or VIL IO = 20 µA; VCC = 2.0 V - - 0.1 V IO = 20 µA; VCC = 4.5 V - - 0.1 V IO = 20 µA; VCC = 6.0 V - - 0.1 V IO = 6.0 mA; VCC = 4.5 V - - 0.33 V IO = 7.8 mA; VCC = 6.0 V - - 0.33 V ILI input leakage current VI = VCC or GND; VCC = 6.0 V - - ±1.0 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 6.0 V - - ±5.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 80 µA Tamb = −40 °C to +125 °C VIH HIGH-level input voltage VCC = 2.0 V 1.5 - - V VCC = 4.5 V 3.15 - - V VCC = 6.0 V 4.2 - - V Table 7: Static characteristics type 74HC245 .continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit
Philips Semiconductors 74HC245:74HCT245 ■ Octal bus tranceiver;3-state Table 7:Static characteristics type At recommended operating conditions:voltages are referenced to GND (ground=0V). Symbol Parameter Conditions Min Typ Max Unit VIL LOW-level input voltage Voc 2.0 V 0.5 Voc =4.5V 1.35V Voc=6.0V 1.8V VoH HIGH-level output voltage Vi=VIH or V lo=-20 uA:Vec 2.0V 1.9 0=-20AVee=45V A4 o -20 HA:Vcc =6.0V 6=-60mA 51 LOW-level output voltage lo=20 uA:Vcc =2.0V 0.1 lo=20 uA:Vcc =4.5V 0.1 V lo=20μAVcc=6.0V 0.1V lo 6.0 mA:Vcc =4.5 V 0.4V lo 7.8 mA:Vcc 6.0 V 0.4V input leakage current +1.0 DEE-state output current +10.0 quiescent supply current 160A 74HCT245 Symbol Parameter Conditions Min Typ Max Unit Tmb=25℃ V HIGH-level input voltage Voc=4.5Vto 5.5V 2.01.6 Vcc 4.5 V to 5.5 V 120.8V evel Vi Vec-45V 44 3.98432 LOW-level output voltage Vi=ViIH or ViL:Vcc=4.5V lo=20HA 0 0.1V lo=6.0 mA 0.150.26V input leakage current Vi=Vcc or GND:Vcc 5.5 V 40.1uA 6 OFF-state output current Vi=VIH or ViL:Vcc =5.5 V: 0.5A quiescent supply current 8.0 A pta Rev.03-31 January 2005
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 8 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state VIL LOW-level input voltage VCC = 2.0 V - - 0.5 V VCC = 4.5 V - - 1.35 V VCC = 6.0 V - - 1.8 V VOH HIGH-level output voltage VI = VIH or VIL - IO = −20 µA; VCC = 2.0 V 1.9 - - V IO = −20 µA; VCC = 4.5 V 4.4 - - V IO = −20 µA; VCC = 6.0 V 5.9 - - V IO = −6.0 mA; VCC = 4.5 V 3.7 - - V IO = −7.8 mA; VCC = 6.0 V 5.2 - - V VOL LOW-level output voltage VI = VIH or VIL - IO = 20 µA; VCC = 2.0 V - - 0.1 V IO = 20 µA; VCC = 4.5 V - - 0.1 V IO = 20 µA; VCC = 6.0 V - - 0.1 V IO = 6.0 mA; VCC = 4.5 V - - 0.4 V IO = 7.8 mA; VCC = 6.0 V - - 0.4 V ILI input leakage current VI = VCC or GND; VCC = 6.0 V - - ±1.0 µA IOZ OFF-state output current VI = VIH or VIL; VO = VCC or GND; VCC = 6.0 V - - ±10.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 6.0 V - - 160 µA Table 7: Static characteristics type 74HC245 .continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Table 8: Static characteristics type 74HCT245 At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Tamb = 25 °C VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 1.6 - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - 1.2 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA 4.4 4.5 - V IO = −6 mA 3.98 4.32 - V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 µA - 0 0.1 V IO = 6.0 mA - 0.15 0.26 V ILI input leakage current VI = VCC or GND; VCC = 5.5 V - - ±0.1 µA IOZ OFF-state output current VI = VIH or VIL; VCC = 5.5 V; VO = VCC or GND per input pin; other inputs at VCC or GND; IO =0A - - ±0.5 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 8.0 µA
Philips Semiconductors 74HC245:74HCT245 Octal bus tranceiver;3-state Symbol Paramote Conditions Min Typ Max Unit Alcc =cc-2.1 other inputs at Vcc =4.5 V to 5.5 V:lo=0A An or Bn inputs 40 144uA OE input 150540uA DIR inout 90324A input capacitance 3.5 uput capacitance HIGH-level input voltage 20 LOW-level input voltage Voc=4.5 Vto 5.5 V 0.8 VOH HIGH-level output voltage Vi=VIH or ViL:Vcc =4.5V lo =-20uA 4.4 lo=-6 mA 3.84 V LOW-level output voltage Vi=ViH or ViL:Vcc 4.5 V =20A 01V lo=6.0 mA 0.33V input leakage current Vi=Vcc or GND:Vec=5.5 V 41.0 OFF-state output curren 5.0 r inputs a D:lo=0A quiescent supply current 80 A additional quiescent supply =Vec -2.1 V:other inputs at current per input pin Anor Bn inputs 180 OE input 675 DIR input 405A Tamb=-40℃to+125℃ HIGH-level input voltage Voc=4.5 Vto 5.5V 2.0 LOW-level input voltage Voc 4.5 Vto 5.5V 0.8 VoH HIGH-level output voltage Vi=VIH or ViL;Vcc =4.5V =_20uA 44 lo=-6 mA 3.7 LOW-level output voltage Vi=ViH or ViL:Vec 4.5 V 0=20A 0.1 l6=6.0m4 input leakage current Vi=Vcc or GND;Vec=5.5 V ±1.0uA loz OFF-state output current ±10 A other inputs at Vcc or GND:lo=0A Rev.03-31 January 2005 9of22
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 9 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state ∆ICC additional quiescent supply current per input pin VI = VCC − 2.1 V; other inputs at VI = VCC or GND; VCC = 4.5 V to 5.5 V; IO =0A An or Bn inputs - 40 144 µA OE input - 150 540 µA DIR input - 90 324 µA CI input capacitance - 3.5 - pF CI/O input/output capacitance - 10 - pF Tamb = −40 °C to +85 °C VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 - - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA 4.4 - - V IO = −6 mA 3.84 - - V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 µA - - 0.1 V IO = 6.0 mA - - 0.33 V ILI input leakage current VI = VCC or GND; VCC = 5.5 V - - ±1.0 µA IOZ OFF-state output current VI = VIH or VIL; VCC = 5.5 V; VO = VCC or GND per input pin; other inputs at VCC or GND; IO =0A - - ±5.0 µA ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 80 µA ∆ICC additional quiescent supply current per input pin VI = VCC − 2.1 V; other inputs at VI = VCC or GND; VCC = 4.5 V to 5.5 V; IO =0A An or Bn inputs - - 180 µA OE input - - 675 µA DIR input - - 405 µA Tamb = −40 °C to +125 °C VIH HIGH-level input voltage VCC = 4.5 V to 5.5 V 2.0 - - V VIL LOW-level input voltage VCC = 4.5 V to 5.5 V - - 0.8 V VOH HIGH-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = −20 µA 4.4 - - V IO = −6 mA 3.7 - - V VOL LOW-level output voltage VI = VIH or VIL; VCC = 4.5 V IO = 20 µA - - 0.1 V IO = 6.0 mA - - 0.4 V ILI input leakage current VI = VCC or GND; VCC = 5.5 V - - ±1.0 µA IOZ OFF-state output current VI = VIH or VIL; VCC = 5.5 V; VO = VCC or GND per input pin; other inputs at VCC or GND; IO =0A - - ±10 µA Table 8: Static characteristics type 74HCT245 .continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit
Philips Semiconductors 74HC245:74HCT245 Octal bus tranceiver;3-state Symbol Parameter Conditions Min Typ Max Unit lcc quiescent supply current Ve VY GND -OA 160uA Alcc 2.1Vother inputs at current per input pin upply or GN Vec=4.5 V to 5.5 V:lo=0A Anor Bn inputs 196A OE input 735 DIR input 441A 11.Dynamic characteristics Symbol Paramete Conditions Min Typ Unit Tamb=25℃ tPHL,teLH RatondelayAnioBmcrenseeEuag Vcc =2.0 V 25 90 Voc =4.5V 18 ns Vcc =5.0 V:CL=15 pF ns Vcc =6.0V 7 15 ns tzH.pzL -state output enable timeto see Figure6 An or OE to Bn Vcc =2.0 V 30 10 ns Vcc=4.5V Vcc =6.0 v 26 A8是gnasabetmecosegueg VCC 2.0 V 41 150 ns Vcc =4.5 V 15 30 Vcc =6.0V 12 26 ns t tT output transition time see Figure 5 Vcc =2.0V 14 60 ns Vcc =4.5V 12 ns .=6.0V 10 capacitance = GND to Vec 30 Tamb=-40℃to+85℃ tPHL, Vec =2.0V 115 ne Vcc=4.5 V Vcc =6.0 V 20 pta Rev.03-31 January 2005 002
9397 750 14502 © Koninklijke Philips Electronics N.V. 2005. All rights reserved. Product data sheet Rev. 03 — 31 January 2005 10 of 22 Philips Semiconductors 74HC245; 74HCT245 Octal bus tranceiver; 3-state 11. Dynamic characteristics ICC quiescent supply current VI = VCC or GND; IO = 0 A; VCC = 5.5 V - - 160 µA ∆ICC additional quiescent supply current per input pin VI = VCC − 2.1 V; other inputs at VI = VCC or GND; VCC = 4.5 V to 5.5 V; IO =0A An or Bn inputs - - 196 µA OE input - - 735 µA DIR input - - 441 µA Table 8: Static characteristics type 74HCT245 .continued At recommended operating conditions; voltages are referenced to GND (ground = 0 V). Symbol Parameter Conditions Min Typ Max Unit Table 9: Dynamic characteristics type 74HC245 GND = 0 V; test circuit see Figure 7. Symbol Parameter Conditions Min Typ Max Unit Tamb = 25 °C tPHL, tPLH propagation delay An to Bn or Bn to An see Figure 5 VCC = 2.0 V - 25 90 ns VCC = 4.5 V - 9 18 ns VCC = 5.0 V; CL = 15 pF - 7 - ns VCC = 6.0 V - 7 15 ns tPZH, tPZL 3-state output enable time OE to An or OE to Bn see Figure 6 VCC = 2.0 V - 30 150 ns VCC = 4.5 V - 11 30 ns VCC = 6.0 V - 9 26 ns tPHZ, tPLZ 3-state output disable time OE to An or OE to Bn see Figure 6 VCC = 2.0 V - 41 150 ns VCC = 4.5 V - 15 30 ns VCC = 6.0 V - 12 26 ns tTHL, tTLH output transition time see Figure 5 VCC = 2.0 V - 14 60 ns VCC = 4.5 V - 5 12 ns VCC = 6.0 V - 4 10 ns CPD power dissipation capacitance per transceiver VI = GND to VCC [1] - 30 - pF Tamb = −40 °C to +85 °C tPHL, tPLH propagation delay An to Bn or Bn to An see Figure 5 VCC = 2.0 V - - 115 ns VCC = 4.5 V - - 23 ns VCC = 6.0 V - - 20 ns