元器件交易网wWW.cecb2b.Com FAIRCHILD SEMICONDUCTOR MBR3035PT-MBR3060PT Features .Low power loss.high efficiency 2462 ·High surge capacity. For use in TO-3P/ MBR3035PT-MBR3060PT 43 app T0-247AD conduction juncion,majority carrie capacity.low forward PIN1 Guard ring for over voltage protection 30 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* T-25'C unless otherwise notec Symbol Parameter Value Units 30 A 0 VR Square Wave.20 KHz)@T=130 30 200 A oe Temperature Ranoe 65104175 ing Junction Tem 65t0+150 These ratings are limiting values above which the serviceability of any semiconductor device may be impared. Electrical Characteristics T25 Parameter Device Units 035P 3045P7 3060PT Peak repetitive reverse voltao Maximum RMS Voltaae 31 35 2 DC Reverse Voltage (Rated Ve) 5 50 60 Voltage Rate of Change (Rated VR) 0.000 Vlus A 82S Peak 0.5 Width,f10 KH
MBR3035PT - MBR3060PT MBR3035PT - MBR3060PT, Rev. A MBR3035PT - MBR3060PT 30 Ampere Schottky Barrier Rectifiers Absolute Maximum Ratings* TA = 25°C unless otherwise noted *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Electrical Characteristics TA = 25°C unless otherwise noted 1999 Fairchild Semiconductor Corporation Symbol Parameter Value Units IO Average Rectified Current 30 A if(repetitive) Peak Repetitive Forward Current (Rated VR , Square Wave, 20 KHz) @ TA = 130°C 30 A if(surge) Peak Forward Surge Current 8.3 ms single half-sine-wave Superimposed on rated load (JEDEC method) 200 A PD Total Device Dissipation Derate above 25°C 3.0 25 W mW/°C RθJL Thermal Resistance, Junction to Lead 1.4 °C/W Tstg Storage Temperature Range -65 to +175 °C TJ Operating Junction Temperature -65 to +150 °C Parameter Device Units 3035PT 3045PT 3050PT 3060PT Peak Repetitive Reverse Voltage 35 45 50 60 V Maximum RMS Voltage 24 31 35 42 V DC Reverse Voltage (Rated VR) 35 45 50 60 V Voltage Rate of Change (Rated VR) 10,000 V/uS Maximum Reverse Current @ rated VR TA = 25°C TA = 125°C 1.0 60 5.0 100 mA mA Maximum Forward Voltage IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C IF = 30 A, TC = 25°C IF = 30 A, TC = 125°C - 0.60 0.76 0.72 0.75 0.65 - - V V V V Peak Repetitive Reverse Surge Current 2.0 us Pulsu Width, f = 1.0 KHz 1.0 0.5 A Features • Low power loss, high efficiency. • High surge capacity. • For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. • Metal silicon junction, majority carrier conduction. • High current capacity, low forward voltage drop. • Guard ring for over voltage protection. TO-3P/ TO-247AD Dimensions are in: inches (mm) + CASE PIN 2 PIN 3 PIN 1 0.193(4.90) 0.203(5.16) 10° 30° 0.078(1.98) 0.108(2.7) 0.118(3.0) 0.020(0.51) 0.030(0.76) 10° TYP BOTH SIDES 1 2 3 0.625(15.9) 0.645(16.4) .17(4.3) 0.076(1.93) 0.086(2.18) 0.044(1.12) 0.048(1.22) 0.205(5.2) 0.225(5.7) 0.225(5.7) 0.245(6.2) 0.114(2.9) 0.134(3.4) 0.313(7.9) 0.323(8.2) 0.117(2.97) 0.127(3.22) 0.14(3.5) 0.16(4.1) 0.775(19.7) 0.795(20.2) 0.82(20.8) 0.84(21.3) 元器件交易网www.cecb2b.com
元器件交易网wwW.Cecb2b.com Schotty Barrier Rectifier (continued Typical Characteristics Forward Current Derating Curve Non-Repetitive Surge Current s300 2 MBR3035PT MBR3060PT 150 RATURE CI NUMBER OF CYCLES AT 6OHT Forward characteristics Reverse Characteristics 0 50， 03 Typical Junction C citance Transient Thermal Impedance T.PULSE DURATION 100 REVERSE VOLTAGE (V)
MBR3035PT - MBR3060PT MBR3035PT - MBR3060PT, Rev. A Schotty Barrier Rectifier (continued) Typical Characteristics Forward Current Derating Curve 0 25 50 75 100 125 150 175 0 6 12 18 24 30 AMBIENT TEMPERATURE ( C) FORWARD CURRENT (A) SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS º MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT Transient Thermal Impedance 0.01 0.1 1 10 100 0.1 1 10 100 T. PULSE DURATION (sec.) TRANSIENT THERMAL IMPEDANCE ( C/W) º Non-Repetitive Surge Current 1 2 5 10 20 50 100 0 50 100 150 200 250 300 NUMBER OF CYCLES AT 60Hz PEAK FORWARD SURGE CURRENT (A) Typical Junction Capacitance 0.1 1 10 100 100 200 500 1000 2000 5000 REVERSE VOLTAGE (V) JUNCTION CAPACITANCE (pF) MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT Forward Characteristics 0 0.2 0.4 0.6 0.8 1 1.2 0.01 0.1 1 10 50 FORWARD VOLTAGE (V) FORWARD CURRENT (A) Pulse Width = 300µS 2% Duty Cycle T = 25 C º A T = 150 C º A MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT Reverse Characteristics 0 20 40 60 80 100 120 140 0.001 0.01 0.1 1 10 50 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) REVERSE CURRENT (mA) T = 25 C º A T = 75 C º A T = 125 C º A MBR3035PT-MBR3045PT MBR3050PT-MBR3060PT MBR3050PT-MBR3060PT MBR3035PT-MBR3045PT 元器件交易网www.cecb2b.com
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