《固体物理学》课程教学课件（PPT讲稿）Chapter 5 band theory 5.1 general background and approximations 5.2 Bloch’s Theorem

《固体物理学》课程教学课件（PPT讲稿）Chapter 4 lattice dynamics and lattice capacity 4（supplement - Thermal Expansion of Glass）

《固体物理学》课程教学课件（PPT讲稿）Chapter 4 lattice dynamics and lattice capacity 4.6 Anharmonic Effects 4.7 Equation of states for Lattice 4.8 Experimental methods for the determinations of lattice vibration spectroscopy

4.5.1 Einstein model 4.5.2 Debye model

《固体物理学》课程教学课件（PPT讲稿）Chapter 4 lattice dynamics and lattice capacity 4.1 Normal Modes of Vibration 4.2 Density of States 4.3 Harmonic approximation and normal mode coordinates 4.4 phonon

《固体物理学》课程教学课件（PPT讲稿）Chapter 3 Interatomic Bonding 3（Supplement - Rules of crystal binding）

《固体物理学》课程教学课件（PPT讲稿）Chapter 3 Interatomic Bonding 3.3 The cohesive energy for ionic crystal

《固体物理学》课程教学课件（PPT讲稿）Chapter 3 Interatomic Bonding 3.1 General crystal binding 3.2 typical binding

《固体物理学》课程教学课件（PPT讲稿）Chapter 2 Wave Diffraction & the Reciprocal Lattice（supplement - Review & Overview of X-Rays）

理想的半导体材料是没有缺陷或没有杂质,半导体中的载流子只能是激发到导带中的电子和价带中的空穴