第一章 流体流动及输送 第三章 非均相物系的分离 第四章 传热

12.1概述 12.1湿空气的性质及湿度图 12.3燥过程的物料衡算与热量衡 12.4燥速率和干燥时间 12.5干燥器

8.1复教 8.2正弦量 8.3相量法的基础 8.4电路定律的相量形式

6.1电容元件 6.2电感元件 6.3电容、电感元件的串联与并联

10.1填料塔 10.2板式塔 10.3塔设备的比较和选型

7.1概述 7.2分子传质 7.3一维稳定分子扩散 7.4对流传质 7.5传质设备简介

External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

Local or remote control Microprocessor controlled RS-232/RS-485 CAN Complete diode laser control Affordably priced and monitoring solution Air or water cooling( specify)

Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating