11.1液液萃取 11.2固液萃取(浸取)

6.1电容元件 6.2电感元件 6.3电容、电感元件的串联与并联

8.1复教 8.2正弦量 8.3相量法的基础 8.4电路定律的相量形式

8.1概述 8.2吸收过程相平衡基础 8.3吸收过程模型及传质速率方程 8.4吸收(或脱吸)塔计算 8.5其他类型吸收

1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) （1)General purpose rectification （2) Surge absorption

MITSUBISHI FAST RECOVERY DIODE MODULE RM400DY665 HIGH POWER SWITCHING USE HVDi(High Voltage Diode) Module INSULATED TYPE

Local or remote control Microprocessor controlled RS-232/RS-485 CAN Complete diode laser control Affordably priced and monitoring solution Air or water cooling( specify)

Oxide Oxide Metallization Contact processing techniques that are similar to those of today's VLSI circuits, although the device geometry, voltage and current ntSource

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

SEMICONDUCTOR Fast Switching Thyristor Replaces July 2001 version, DS4267-40 DS4267-41July2002 FEATURES KEY PARAMETERS Low Switching Losses At High Frequency