Simplistic Model Physical Structure Threshold Voltage Long Channel Current Equations Regions of Operation Transconductance Channel Length Modulation CMOS Processing Technology MOS Layout Device Capacitances Device Capacitances Passive Devices Small Signal Models Circuit Impedance Equivalent Transconductance Short-Channel Effects Drain-Induced Barrier Lowering (DIBL) Effects of Velocity Saturation Hot Carrier Effects
§5.1 Filter Design by the Insertion Loss Method §5.2 Filter Scaling and Transformation §5.3 Low-pass and high-pass using Transmission line stub §5.4 Stepped-Impedance low-pass Filters §5.5 Bandpass Filters using Transmission Line Response
§9.1 Analog Modulation模拟调制 §9.2 Binary Digital Modulation二进制数字调制 §9.3 Error Probabilities for Binary Modulation 二进制调制的出错概率 §9.4 Effect of Rayleigh Fading on Bit Error Rats 瑞利衰落对误码率的影响 §9.5 M-ary Digital ModulationM维的数字调制
§6.1 FET and BJT Models 模型 §6.2 Two-port Power Gains 双端口功率增益 §6.3. Stability 稳定性 §6.4 Amplifier Design using S Parameters 利用S参数进行放大器设计 §6.5 Low-Noise Amplifier Design 低噪声放大器 §6.6 Power Amplifier 功放
§3.1 Review of Random Processes 随机过程回顾 §3.2 Thermal Noise 热噪声 §3.3 Noise in Linear System 线性系统中的噪声 §3.4 Basic Threshold Detection 基本的门限检测 §3.5 Noise Temperature and Noise Figure 噪声温度和噪声系数 §3.6 Noise Figure of Passive Networks 无源网络的噪声系数 §3.7 Dynamic Range and Intermodulation Distortion 动态范围和交调失真