1SR154400/1sR154-600 Diodes Rectifier diode 1SR154400/1sR154600 EXternal dimensions(Units: mm) （1)General purpose rectification （2) Surge absorption

High power diode laser ROFIN DI Series ROFIN DL X75 750 w ROFIN DL 010 000 W ROFIN DL 015 500 W ROFIN DL 020 2000 w ROFIN DL 025 2500 W ROFIN DL 030 3000 w ROFINI SINAR

The TA8025P TA8025F is an IC designed for making the esigneo or ma output signal from electromagnetic pick up sensor and etc.... waveform-shaping. The Vth of input has hysteresis that is TA8025P division value between peak voltage of input signal and. Features Input frequency

Schottky Power Rectifier employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features oN Semiconductor epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or http:/lonsemi.com

he World's Largest-Capacity 8kV/3.6kA Light-Triggered Thyristor by Katsumi sato* Mitsubishi Electric has developed an 8kV/3.6kA light-triggered thyristor (LTT) based on a six inch wafer for power-converter applications in igh-voltage DC transmission and back-to-back systems. New design features give the device

The IPMTS.OAT1/T3 Series is designed to protect voltage sensitive components from high voltage, high energy transients http:/lonsemi.com Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space PLASTIC SURFACE MOUNT saving surface mount with its unique heat sink design. The

VDRMI VARM =10ms 1/2 sine. Vosu V asM =VDRM+ 100V respectively. Lower voltage grades available. ORDERING INFORMATION When ordering select the required part number shown in the Voltage Ratings selection table r ex For example:

DoC. No. 5SYA1036-03 Sep Two thyristors integrated into one wafer Patented free-floating silicon technology Designed for traction, energy and industrial applications Optimum power handling capability Interdigitated amplifying gate The electrical and thermal data are valid for one thyristor half of the device

2.1单相可控整流电路 2.2三相可控整流电路 2.3变压器漏感对整流电路的影响 2.4电容滤波的不可控整流电路 2.5整流电路的谐波和功率因数 2.6大功率可控整流电路 2.7整流电路的有源逆工作状态 2.8晶闸管直流电动机系统 2.9相控电路的驱动控制

听觉是一种经过大脑皮层分析的感觉,其由传音结构和感音器官构成,上述两个系统中任何部位因损伤或疾病导致结构或功能障碍,均可以引起听力下降。听力测试是通过声音刺激听觉器官得出的数据来显示听觉系统病变的技术。其目的是通过测试了解听觉功能状态,鉴别听力障碍的类型和程度。听力测试分为主观和客观两种方法