Introduction to Insulated Gate Bipolar Transistors Prepared by: Jack Takesuye and scott Deuty Motorola inc INTRODUCTION As power conversion relies more on switched applications The IGBT is, in fact, a spin-off from power MOSFET

2.1 电阻串并联联接的等效变换 2.2 电阻星型联结与三角型联结的等效变换 2.3 电源的两种模型及其等效变换 2.4 支路电流法 2.5 结点电压法 2.6 叠加原理 2.7 戴维宁定理与诺顿定理 2.8 受控源电路的分析 2.9 非线性电阻电路的分析

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External dimensions(Unit: mm) High frequency rectification （1)Small power mold type(PMDS) （2) Ultra low VF （3)Very fast recovery

第2章电路的分析方法 2.1电阻串并联联接的等效变换 2.2电阻星型联结与三角型联结的等效变换 2.3电压源与电流源及其等效变换 2.4支路电流法 2.5结点电压法 2.6叠加原理 2.7戴维宁定理与诺顿定理 2.8受控源电路的分析 2.9非线性电阻电路的分析

7.1软开关的基本概念 7.2软开关电路的分类 7.3典型的软开关电路

Fast response(tdon 3 FS, doff <6 Hs) Precise timing(Atdoff 800 ns) Patented free floating silicon technology Optimized low on-state and switching losses Very high EMI immunity Cosmic radiation withstand rating

Direct fiber optic controll and status Fast response(tdon 3 FS, doff <6 Hs) Precise timing Patented free-floating silicon technology High reliability Very high EMI immunity

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