课程实 薄膜材料专题文献阅读 实验目的 每位同学以自己选择的英文文献为线索 ,通过阅读文献和其他的相关材料,达到较 深入地了解薄膜材料制备技术领域某一具体 课题的目的。 二、实验内容与方案 根据指导教师给定的英文文献,结合授 课内容进行独立阅读,并查阅相关的背景资 料,并完成3000字左右的文献阅读报告。同 时,通过对于文献的公开宣讲,使其他同学 也对相关课题有所了解
课程实验 ——薄膜材料专题文献阅读 一、实验目的 每位同学以自己选择的英文文献为线索 ，通过阅读文献和其他的相关材料，达到较 深入地了解薄膜材料制备技术领域某一具体 课题的目的。 二、实验内容与方案 根据指导教师给定的英文文献，结合授 课内容进行独立阅读，并查阅相关的背景资 料，并完成3000字左右的文献阅读报告。同 时，通过对于文献的公开宣讲，使其他同学 也对相关课题有所了解
课程实 薄膜材料专题文献阅读 、实验基本要求 每位同学阅读自己选择的文献,并按照文献 的实验思路提交3000字的文献阅读摘要;同时, 由选择同一文献的多位同学推举出一位代表,对 文献内容进行一次公开宣讲,以达到互相学习的 目的。文献阅读摘要要求回答如下问题: 1.文献内容概述——包括主要的实验方法与结果、 重要的实验进展 2.文献所获得的结果与现有薄膜材料制备技术理论 的相关性 3.今后可以开展的实验工作
三、实验基本要求 每位同学阅读自己选择的文献，并按照文献 的实验思路提交3000字的文献阅读摘要；同时， 由选择同一文献的多位同学推举出一位代表，对 文献内容进行一次公开宣讲，以达到互相学习的 目的。文献阅读摘要要求回答如下问题： 1. 文献内容概述——包括主要的实验方法与结果、 重要的实验进展 2. 文献所获得的结果与现有薄膜材料制备技术理论 的相关性 3．今后可以开展的实验工作 课程实验 ——薄膜材料专题文献阅读
课程实验 薄膜材料专题文献阋读 四、评分标准 占考试总分数的20%,其中: 技术和专业内容:60% 写作与形式表达:40%
四、评分标准： 占考试总分数的 20%，其中： 技术和专业内容： 60% 写作与形式表达： 40% 课程实验 ——薄膜材料专题文献阅读
时:教师指定的英文文献18篇 WNucleation on TiN from WF6 and SiH4"SL Lantz et al . J Vac. Sci. Technol. A 12(4)1032(1994) comparison of two epitaxial formation mechanisms in the Sige system and the subsequent defect generation"S M. Prokes and A.K. Rai, J Vac. Sci. Technol. A 12(4)1148(1994) Dependence of material properties of RF magnetron-sputtered Cu-doped, ZnTe films on deposition conditions" T.A. Gessert et al., J. Vac. Sci. Technol. A 12(4)1501(1994) Study of ion-beam-sputtered ZnO films as a function of deposition temperature"Y. Qu et al., J. Vac. Sci. Technol.A 12(4)1507(1994) ." Microstructural study of sputter-deposited CdTe thin films"X Li et al., J. Vac. Sci. Technol. A 12(4)1608(1994)
附：教师指定的英文文献18篇 ◆ "W Nucleation on TiN from WF6 and SiH4" S. L. Lantz et al., J. Vac. Sci. Technol. A 12(4) 1032 (1994). ◆ "Comparison of two epitaxial formation mechanisms in the SiGe system and the subsequent defect generation" S. M. Prokes and A. K. Rai, J. Vac. Sci. Technol. A 12(4) 1148 (1994). ◆ "Dependence of material properties of RF magnetron-sputtered, Cu-doped, ZnTe films on deposition conditions" T. A. Gessert et al., J. Vac. Sci. Technol. A 12(4) 1501 (1994). ◆ "Study of ion-beam-sputtered ZnO films as a function of deposition temperature" Y. Qu et al., J. Vac. Sci. Technol. A 12(4) 1507 (1994). ◆ "Microstructural study of sputter-deposited CdTe thin films" X. Li et al., J. Vac. Sci. Technol. A 12(4) 1608 (1994)
附:教师指定的英文文献18篇 o Transition from Stranski-Krastanoy to quasi-layer-by-layer growth in Pb deposition on Cu(100)"H. Zeng et al., J. Vac. Sci Technol.A12(4)2058(1994) Heteroepitaxy of lattice-matched compound semiconductors on silicon"K. Bachman et al. J. Vac. Sci. Technol. A 13(3)696 (1995) Application of electron cyclotron resonance plasma source to conductive film deposition"M. Shimada et al, J Vac. Sci Technol.A13(3)815(1995) Fabrication of thin films with highly porous microstructures"K Robbie et al., J. Vac. Sci. Technol. A 13 (3)1032(1995) ."Low temperature formation of textured ZnO transparent electrodes by magnetron sputtering"T Minami et al., J Vac. Sci Techno.A13(3)1053(1995)
附：教师指定的英文文献18篇 ◆ "Transition from Stranski-Krastanov to quasi-layer-by-layer growth in Pb deposition on Cu(100)" H. Zeng et al., J. Vac. Sci. Technol. A 12(4) 2058 (1994). ◆ "Heteroepitaxy of lattice-matched compound semiconductors on silicon" K. Bachman et al. J. Vac. Sci. Technol. A 13(3) 696 (1995). ◆ "Application of electron cyclotron resonance plasma source to conductive film deposition" M. Shimada et al., J. Vac. Sci. Technol. A 13(3) 815 (1995). ◆ "Fabrication of thin films with highly porous microstructures" K. Robbie et al., J. Vac. Sci. Technol. A 13(3) 1032 (1995). ◆ "Low temperature formation of textured ZnO transparent electrodes by magnetron sputtering" T. Minami et al., J. Vac. Sci. Technol. A 13(3) 1053 (1995)
附:教师指定的英文文献18篇 ."Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide(Ta205)thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride(TaF5)source. E. Z. Luo et al., J. Vac. Sci Technol.A17(6),3235(1999 Fine control of deposition film compositions using radio frequency reactive sputtering with periodic gas additions"S Kimura et al., J. Vac. Sci. Technol. A 17(6), 3312(1999) Mechanism of columnar microstructure growth in titanium oxide thin films deposited by ion-beam assisted deposition"Q Tang et al., J. Vac. Sci. Technol. A 17(6), 3379(1999) +"Preparation and mechanical properties of composite diamond like thin films"Q. Wei et al, J. Vac. Sci. Technol. A 17(6), 3406 (1999
附：教师指定的英文文献18篇 ◆ "Effects of deposition conditions on the fluorine and hydrogen concentration in tantalum pentoxide (Ta2O5) thin films prepared by plasma enhanced chemical vapor deposition using a tantalum pentafluoride (TaF5) source." E. Z. Luo et al., J. Vac. Sci. Technol. A 17(6), 3235 (1999). ◆ "Fine control of deposition film compositions using radiofrequency reactive sputtering with periodic gas additions" S. Kimura et al., J. Vac. Sci. Technol. A 17(6), 3312 (1999). ◆ "Mechanism of columnar microstructure growth in titanium oxide thin films deposited by ion-beam assisted deposition" Q. Tang et al., J. Vac. Sci. Technol. A 17(6), 3379 (1999). ◆ "Preparation and mechanical properties of composite diamondlike thin films" Q. Wei et al., J. Vac. Sci. Technol. A 17(6), 3406 (1999)
附:教师指定的英文文献18篇 Vapor-deposited gold film formation on highly oriented pyrolitic graphite. A transition from pseudo-two-dimensional branched island growth to continuous film formation "B. blum et al., J. Vac. Sci. Technol. B 17(6), 2431(1999) Multisource plasma chemical vapor depostion for synthesis of SINX-SIOy and SiNx-SiCy composite films"R Nonogaki et al J. Vac. Sci. Technol. A 18(1), 63(2000) Chemical vapor deposition of pyrolitic boron nitride from borazine"V. Demin et al., J. Vac. Sci. Technol. A 18(1),94 (2000 Growth and modification of Ag islands on hydrogen terminated Si(100) sur faces"M.J. Butcher et al., J. Vac. Sci. Technol. B 18(1),13(2000)
附：教师指定的英文文献18篇 ◆ "Vapor-deposited gold film formation on highly oriented pyrolitic graphite. A transition from pseudo-two-dimensional branched island growth to continuous film formation" B. Blum et al., J. Vac. Sci. Technol. B 17(6), 2431 (1999). ◆ "Multisource plasma chemical vapor depostion for synthesis of SiNx-SiOy and SiNx-SiCy composite films" R. Nonogaki et al., J. Vac. Sci. Technol. A 18(1), 63 (2000). ◆ "Chemical vapor deposition of pyrolitic boron nitride from borazine" V. Demin et al., J. Vac. Sci. Technol. A 18(1), 94 (2000). ◆ "Growth and modification of Ag islands on hydrogen terminated Si(100) surfaces" M. J. Butcher et al., J. Vac. Sci. Technol. B 18(1), 13 (2000)