当前位置:高等教育资讯网  >  中国高校课件下载中心  >  大学文库  >  浏览文档

北京化工大学:《无机化学》课程电子教案(教学课件,2011)Chapter 10 Solid Structure

资源类别:文库,文档格式:PDF,文档页数:83,文件大小:3.28MB,团购合买
§10.1 The Structures and Types of Crystals §10.2 Metallic Crystals §10.3 Ionic Crystals §10.4 Molecular Crystals §10.5 Network Crystals
点击下载完整版文档(PDF)

Chapter 10 Solid Structure X$10.1 The Structures and Types of Crystals X 10.2 Metallic Crystals ☒§10.3 Ionic Crystals ☒§10.4 Molecular Crystals ☒§10.5 Network Crystals

§10.1 The Structures and Types of Crystals Chapter 10 Solid Structure §10.5 Network Crystals §10.4 Molecular Crystals §10.3 Ionic Crystals §10.2 Metallic Crystals

10.1 The Structures and Types of Crystals s10.1.1 Crystal Structures 10.1.2 Crystal Defects,Amorphous Soilds 10.1.3 Types of Crystals

10.1.1 Crystal Structures §10.1 The Structures and Types of Crystals 10.1.3 Types of Crystals 10.1.2 Crystal Defects, Amorphous Soilds

10.1.1 Crystal Structures Crystallove 水晶之恋 alibaba.com钟

10.1.1 Crystal Structures

A stage when the Ruby(红宝石) production process comes to end

A stage when the production process comes to end Ruby (红宝石 )

Unit Cells The basic repeating unit of a crystalline solid.Any of the unit cells,when repeated in space in all three dimensions,forms the lattice structure characteristic of a crystalline solid. The essentials of unit cells: 1.unit cell dimension and shape: cell parameters:a,b,c, and a,B,Y. a,b,c Hexahedral length, a,B,y is the be,ca,ab a composed of Angle

Unit Cells : The basic repeating unit of a crystalline solid. Any of the unit cells, when repeated in space in all three dimensions, forms the lattice structure characteristic of a crystalline solid. cell parameters: a,b,c, and α,β,γ. a,b,c Hexahedral length, α,β,γ is the bc , ca , ab composed of Angle The essentials of unit cells: 1. unit cell dimension and shape:

2.unit cell content: Every crystalline solid can be described in terms of one of the seven types of unit cells. types of unit cells edge-length angle examples cubic 立方晶系 a=b=c a=B=y=90 NaCl a=b=c rhombohedral 三方晶系 a=B=y≠90 AbO; 菱面体晶胞 tetragonal 四方晶系 a=b≠c a=B=y=90 SnO hexagonal 六方晶系 a=b≠c a=B=90°,y=120 AgI orthorhombic 正交晶系 a≠b≠c a=B=y=90 HgCk monoclinic 单斜晶系 a≠b≠c a=B=90°,y≠90° KCIO3 triclinic 三斜晶系 a≠b≠c a≠B≠y≠90 CuSO5H2O 14 Bragg lattices which belong to 7 crystal systems.Each system has a primitive cell,and some allow face or body centering,as well as the rhombohedral centering in the trigonal system

2. unit cell content: 14 Bragg lattices which belong to 7 crystal systems. Each system has a primitive cell, and some allow face or body centering, as well as the rhombohedral centering in the trigonal system. Every crystalline solid can be described in terms of one of the seven types of unit cells. cubic rhombohedral tetragonal hexagonal orthorhombic monoclinic triclinic edge-length angle examples 立方晶系 a = b = c α=β=γ= 900 NaCl 三方晶系 a = b = c α=β=γ≠900 Al2O3 四方晶系 a = b≠c α=β=γ= 900 SnO2 六方晶系 a = b≠c α=β= 900 , γ= 1200 AgI 正交晶系 a≠b≠c α=β=γ= 900 HgCl2 单斜晶系 a≠b≠c α=β= 900 , γ≠ 900 KClO3 三斜晶系 a≠b≠c α≠β≠γ≠ 900 CuSO4·5H2O types of unit cells 菱面体晶胞

Monoclinic Triclinic 14 Bragg lattices Orthorhombic P Tetragonal Trigonal/Hexagonal P Trigonal R Cubic

14 Bragg lattices

10.1.2 Crystal defects(晶体缺陷) l.Schottky defect(Latent defects,本征缺陷) A Schottky defect consists of an atom or ion vacancy in a crystal lattice,but the stoichiometry of a compound (and thus electrical neutrality)must be retained.In a metal lattice,a vacant atom site may be present.由于晶体中晶格结点上的微粒热涨落所导致的 缺陷

10.1.2 Crystal defects (晶体缺陷 ) 1.Schottky defect (Latent defects,本征缺陷 ) A Schottky defect consists of an atom or ion vacancy in a crystal lattice, but the stoichiometry of a compound (and thus electrical neutrality) must be retained. In a metal lattice, a vacant atom site may be present.由于晶体中晶格结点上的微粒热涨落所导致的 缺陷

2.Frenkel defect In a Frenkel defect,an atom or ion occupies a normally vacant site,leaving its own'lattice site vacant. 6)

2. Frenkel defect In a Frenkel defect, an atom or ion occupies a normally vacant site, leaving its ‘own’ lattice site vacant

2.Impurity defects(杂质缺陷) Defects caused by incorporation of impurity into the crystal Si 活动电子 Movable electrons 正电空穴 Positively charged vacancy Electron-excess Electron-deficient

2. Impurity defects (杂质缺陷 ) Electron-excess Electron-deficient Positively charged vacancy Movable electrons Defects caused by incorporation of impurity into the crystal

点击下载完整版文档(PDF)VIP每日下载上限内不扣除下载券和下载次数;
按次数下载不扣除下载券;
24小时内重复下载只扣除一次;
顺序:VIP每日次数-->可用次数-->下载券;
共83页,可试读20页,点击继续阅读 ↓↓
相关文档

关于我们|帮助中心|下载说明|相关软件|意见反馈|联系我们

Copyright © 2008-现在 cucdc.com 高等教育资讯网 版权所有