430己己71005399372T 的严八向s ■HAS RF530/531/532533 iRF530R/531R/532R/533R N-Channel Power MOSFETs May 1992 Avalanche Energy Rated* Features Package 12A and 14A, 80V-100V TO-220AB TOP VIEW rDs(on)=0.162 and 0.230 Single Pulse Avalanche Energy Rated DRAN FLANG日 Nanosecond Switching Speeds Linear Transfer Characteristics High Input Impedance Description The IRF530, IRF531,IRF532, and IRF533 are n-channelTerminal Diagram enhancement-mode silicon-gate power field-effect transis. rs. IRF53OR, IRF531R, IRF532R and IRF533R types are N-CHANNEL ENHANCEMENT MODE dvanced power MOSFETs designed, tested, and guaranteed to withstand a specified level of energy in the breakdown blanche mode of switching converters, motor drivers, relay drivers, and drivers ng high speed and low gate-drive power. These types can be operated directly from integrated circuits The IRF types are supplied in the JEDEC TO-220AB plastic package. Absolute Maximum Ratings(Tc=+250C), Unless Otherwise Specified RF531 RF532 RF533 RF53OR tRF531R IRF532R IRF533R UNITS Gate Voltage(RGs=20kn) ontinuous Drain Current ±20 maximum Power DIssipation Linear Derating Factor. TJ, TSTG-55to+175-55to+175-55to+175-55t+175oc o063"(1. 6mm)from case for NOTES: 25°c,L甲530HRGs=250, 3. Repetitive rat width limed by maximum junction temperature Curve(Figure 5. R Suffix Types Only CAUTION: These devices are sensitive to electrostatic discharge. Proper L.C. handling procedures should be followed Copyright O Harris Corporation 1992 File Number 1575.2
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430己己71053日4bb■HAS /RF530/RF531, IRF532, /RF533 /RF530R, IRF531R, IRF532R, IRF533R ectrical Characteristics Tc= 250C, Unless Otherwise Specified TEST CONDITIONS MIN TYP MAX UNITS oltage BVDSS VGs=OV,D=250pA 531/533RF531R/533R TH, -VGS. ID=250A Gate-Source Leakage Reverse lGss VGs=-2oV Zero Gate Voltage Drain Current Dss VDS=Max Rafing, VGs=OV Vps= Max Rating xO. 8, VGs=OV, D(ON)VDs>ID(ON) XrDS(ON) Max, VGS=10V S(ON)VGS=10V, D-83A 530R/531R RF532/533,RF532R533R 0200239 Forward Transconductance (Note 2) s250vb=83A 5176 See Figure 1 (MOSFET switching times Delay Time Gate-Source Gate-Drain) Gate charge is essentially independent of operating temperature y nc Modified MOSFET symbol showing the inductances Internal Source Inductanc ocs Mounting surface flat, smooth and grease oC/ JA Free air operation oC/w Source Drain Diode Ratings and Characteristics Source Current (Body Diode)( Note 3) IsMP-Njunc e Forward Voltage(Note 2) TTJ=+250C. IF=14A, dlF/dt=100A/us Reverse Recovered Charge J=+25°c=14AdF/t=100A time is negligible. Turn-o NOTES:1.TJ=+25°阳+150°c RGs=25n, PEAK 14A (See Figure 15 edance Curve(Figure
430己己?100539955T己■HAS IRF530, IRF531, IRF532, IRF533 IRF53OR, IRF531R, IRF532R, IRF533R Performance Curves VGS GATE-TO-SOURCE FIGURE 1. TYPICAL OUTPUT CHARACTERISTICS FIGURE 2. TYPICAL TRANSFER CHARACTERISTICS 103t 出区z VOs ORAIN-TO-SOURCE VOLTAGE IVaL TS)o FIGURE 3. TYPICAL SATURATION CHARACTERISTICS FIGURE 4. MAXIMUM SAFE OPERATING AREA CUTY FACTOR, D-ty/t t2 EAK TJ PoM X 2thuc·te 01 t1. RECTANGULAR PULSE DURATION (SECONDS) FIGURE 5. MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION 4288
430己己710053号5b43号■HAS IRF530, /RF531,/RF532, /RF533 /RF530R, /RF53 1R, IRF532R, IRF533R Performance Curves (continued) os e 50v FIGURE 6. TYPICAL TRANSCONDUCTANCE VS DRAIN FIGURE 7. TYPICAL SOURCE-DRAIN DIODE FORWARD T JUNCTION TEMPERATURE oC FIGURE 8. BREAKDOWN VOLTAGE VS TEMPERATURE FIGURE 8. NORMALIZED ON-RESISTANCE vS MPERATURE 994tb口 uB> Vps. DRAIN-TO-5CURCE VOL I AGE /VOL TS: 102 AGURE 10. TOLTALE APACITANCE VS DRAIN-TO-SOURCE FGURE GATE-TO-SOU 4289
430己己71005317375■HAS IRF530, IRF531, IRF532, IRF533 RF53OR, IRF531R, IRF532R, IRF533R Performance Curves(Continued) 否8。 FIGURE 12. TYPICAL ON RESISTANCE VS DRAIN CURRENT FIGURE 13. MAXIMUM DRAIN CURRENT VS CASE A\E1"0.5 BVDss Ec-075 Boss FIGURE 143, CLAMPED INDUCTIVE TEST CIRCUIT FIGURE 15a. UNCLAMPED ENERGY TEST CIRCUIT FIGURE1 4b. CLAMPED INDUCTIVE WAVEFORMS FIGURE 15b. UNCLAMPED ENERGY WAVEFORMS CURREN REGULATO Ro BATTERY 1.5mA AMPUNG RESISTOR AMPUNG RESISTOR FIGURE 16. SWITCHING TIME TEST CIRCUIT FIGURE 17. GATE CHARGE TEST CIRCUIT 4290
