IS MJ2955 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 High Current Capability 22.22 MAX Complementary to MJ3055 =,鸿4 ABSOLUTE MAXIMUM RATING (Ta=25c) 一 Characteristic Symbol Rating Unit Collector- Emitter voltag VEBO Collector Current (DC) Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Ta=25C) Characterristic Symbol Test Condition Mi Ty yp Unit Collector Base Breakdown Voltage BVCBO C=10 mA E=0 Collector Emitter Breakdown Voltage IC=-5 mA RBE= mitter Base Breakdown Voltage BEBO Collector Cutoff Current VCB=-30V IE=0 Emitter Cutoff Current TEBO DC Current Gain hFEI VCE=5V IC=-1A40 100 DC Current Gai E2 VCE=-5V IC=-4A 70 Collector- Emitter Saturation Voltage VCE(sat) IC=-4A IB=-04A wing Shing Computer Components Co., (H K )Ltd. Tel:(852)23419276Fax:(852)27978153 Ing. com E-mail: wsccltdahkstar com
MJ2955 PNP PLANAR SILICON TRANSISTOR AUDIO POWER AMPLIFIER DC TO DC CONVERTER TO-3 ! High Current Capability ! High Power Dissipation ! Complementary to MJ3055 ABSOLUTE MAXIMUM RATING (Ta=25°C) Characteristic Symbol Rating Unit Collector-Base Voltage Collector-Emitter Voltage Emitter-Base voltage Collector Current (DC) Collector Dissipation Junction Temperature Storage Temperature VCBO VCEO VEBO IC PC Tj Tstg -60 -60 -6 -15 117 150 -50~150 V V V A W °C °C ELECTRICAL CHARACTERISTICS (Ta=25°C) Characterristic Symbol Test Condition Min Typ Max Unit Collector Base Breakdown Voltage Collector Emitter Breakdown Voltage Emitter Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current *DC Current Gain DC Current Gain Collector- Emitter Saturation Voltage BVCBO BVCEO BVEBO ICBO IEBO hFE1 hFE2 VCE(sat) IC=-10 mA IE=0 IC=-5 mA RBE= IE=-5 mA IC=0 VCB=-30V IE=0 VEB=-4V IC=0 VCE=-5V IC=-1A VCE=-5V IC=-4A IC=-4A IB=-0.4A -60 -60 -6 40 20 -0.1 -0.1 100 70 -1.1 V V V mA mA V Wing Shing Computer Components Co., (H.K.)Ltd. Tel:(852)2341 9276 Fax:(852)2797 8153 Homepage: http://www.wingshing.com E-mail: wsccltd@hkstar.com
