Generated by Foxit PDF Creator Foxit Soft ttp//www.foxitsoftware.comForevaluation 集成电路原理与设计 MOS器件
集成电路原理与设计 MOS器件 Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
Generated by Foxit PDF Creator Foxit Software ttp//www.foxitsoftware.comForevaluationonly 长沟道Mos器件模型 >311M0s晶体管阈值电压分析 >312Mos晶体管电流方程 >32.1MoS晶体管的亚阈值电流 >32.2Mos晶体管的瞬态特性 >323MoS器件模型
2 长沟道MOS器件模型 3.1.1 MOS晶体管阈值电压分析 3.1.2 MOS晶体管电流方程 3.2.1 MOS晶体管的亚阈值电流 3.2.2 MOS晶体管的瞬态特性 3.2.3 MOS器件模型 Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
Generated by Foxit PDF Creator Foxit Software ttp//www.foxitsoftware.comForevaluationonly MoS晶体管的结构和原理 MOS晶体管的结构 口多晶硅 D 有源区 金属 Sic S
3 S D G 多晶硅 有源区 金属 W L SiO2 SiO2 n+ n+ S D L p-Si tox xj G MOS晶体管的结构 MOS晶体管的结构和原理 Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
Generated by Foxit PDF Creator Foxit Software http://www.foxitsoftware.comForevaluationonly Gate MOS晶体管工作原理c Source /Drain P-Type //正 源 E。 E 栅 (b) (d) 漏耗尽区
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Generated by Foxit PDF Creator Foxit Software ttp//www.foxitsoftware.comForevaluationonly Gate Oxid 垂直方向能带图 Source/ Dr Ec Ec 24h Ei Ei E F Ey E GS S
5 Ec Ei EF Ev Ec Ei EF Ev 2 VGS = 0 VGS > VT F 垂直方向能带图 Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
Generated by Foxit PDF Creator Foxit Software G D 要约道方向能带图 SiO n Ec Ec E Fn Ey E S DS
6 沿沟道方向能带图 Ec Ei EF Ev V = 0 Ec Ei EF Ev DS VDS > 0 n SiO2 SiO2 n+ n+ S D L p-Si tox xj G Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
Generated by Foxit PDF Creator Foxit Software ttp//www.foxitsoftware.comForevaluationonly MOSFET的输入、输出特性曲线 线性区 饱和区 VGs 5V 5 3 VGs /au /au
7 MOSFET的输入、输出特性曲线 Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
Generated by Foxit PDF Creator Foxit Soft ttp//www.foxitsoftware.comForevaluation Mos晶体管阈值电压分析 阈值电压的定义: 使源端半导体表面达到强反型的栅压,是 区分MOS器件导通和截止的分界点
MOS晶体管阈值电压分析 阈值电压的定义： 使源端半导体表面达到强反型的栅压，是 区分MOS器件导通和截止的分界点。 Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
nerated by Foxit PDF Creator@ Foxit Softy /. foxitsoftware com For evaluation witch Model of NMOS Transistor Gate ource Drain (of carriers (of carriers Open(off)(Gate=0) Closed(on)(Gate=“1)
9 Switch Model of NMOS Transistor Gate Source (of carriers) Drain (of carriers) | VGS | | VGS | | VT | Open (off) (Gate = ‘0’) Closed (on) (Gate = ‘1’) Ron Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
Generated by Foxit PDF Creator Foxit Software 半导体表面达到强反型的 阈值电/栅压-N G n nt n channel depletion p substrate region B 10
10 阈值电压 S D p substrate B G VGS + - n+n+ depletion region n channel 半导体表面达到强反型的 栅压-- VT Generated by Foxit PDF Creator © Foxit Software http://www.foxitsoftware.com For evaluation only
