Chapter13 The p-block elements(I 13.1 Outline on the p-block elements 13.2 The elements of boron family X 13.3 The elements of carbon family
Chapter13 The p-block elements(Ⅰ) § 13.3 The elements of carbon family § 13.2 The elements of boron family §13.1 Outline on the p-block elements
13.1 Outline of the p-block elements 1 18 IA 1314 1516 17 0 1 A IIIA IVA VA VIA VIA He Li Be B 3 4 5 6 7 8 9 c N 0 Ne 101112 Na Mg IIIB IVB VB VIB VIB 四 IB IIB Si P c1 Ax K Ca SeTi Cx n Fe Co Ni CuZn Ga Ge As Se Bx 5 Rb Sx YZ红b Mo Te Ru Rh Pd Ag cd In Sn Sb Te I Xe Cs Ba Lu Ha Ta Re Ix Pt Au Hg Pb Bi Po At Rn Ra L红RED Sg Bh Hs 镧系 La Ce Pn Sm Eu Gd Tb Dy Ho Ex Tm Yb 钢系 Ac h Pa Pu Am Cm Bk Cf Es Em Md No
§13.1 Outline of the p-block elements
General features in properties of p-block elements ◆p-block elements show secondary periodic trends(二次 周期性)when descending in the same groups. 1 The p-block elements in the 2ed row (i.e.,B,C,N,O,F (only having 2s,2p orbits))are abnormal in many ways compared to the other elements in the same groups Example:1)形成配合物时，配位数最多不超过4； 2)第二周期元素单键键能小于第三周期元素单键键能 EN-N)=159E(0-0)=142EF-F)=158 EP-P)=209ES-S)=264E(C-C)=244 N,O,F原子半径小，成键时N-N,O-O,F-F键长短，未参与成键 的电子间排斥作用大，削弱了共价键的强度)
① The p-block elements in the 2ed row (i.e., B, C, N, O, F (only having 2s, 2p orbits)) are abnormal in many ways compared to the other elements in the same groups Example: 1)形成配合物时，配位数最多不超过4； 2)第二周期元素单键键能小于第三周期元素单键键能. General features in properties of p-block elements ◆ p-block elements show secondary periodic trends(二次 周期性) when descending in the same groups. E(N-N)=159 E(O-O)=142 E(F-F)=158 E(P-P)=209 E(S-S)=264 E(Cl-Cl)=244 (N,O,F原子半径小, 成键时N-N, O-O, F-F键长短, 未参与成键 的电子间排斥作用大, 削弱了共价键的强度)
2The p-block elements in the 4th and 5th rows show differ- ences (due to insertion of d block)compared to other rows Example:The oxidizing power of HBrO3 and HBrO are stronger than that of other haloid acids(HCIO3,HIO3) and perhaloid acids (HCIO4,HIO). Ee(C103/C12)=1.458V 1314151617 IIA IVA VA VIA VIA E9(Br03Br2)=1.513V E9(IO312)=1.209V Si Ga Ge As Se Br Ee(C1O4/C10,)=1.226V In Sn Sb E(BrO/BrO3)=1.763V Ee(HI0603)=1.60V
② The p-block elements in the 4th and 5th rows show differences (due to insertion of d block) compared to other rows E (ClO3 /Cl2 ) =1.458V − (BrO /Br ) 1.513V 3 2 = − E (IO /I ) 1.209V 3 2 = − E (ClO4 /ClO3 ) =1.226V − − E Example：The oxidizing power of HBrO3 and HBrO4 are stronger than that of other haloid acids (HClO3 , HIO3 ) and perhaloid acids (HClO4 , H5 IO6 ). E (H5 IO6 /IO3 ) =1.60V − E (BrO4 /BrO3 ) =1.763V − −
3The properties of last three p-block elements in the same group (elements in the 4th,5th and 6th rows) change soft-progressively (due to insertion of d-block and f-block). K+ Ca2+ Ga3+ Ge4+ AS5+ r/pm 133 99 62 53 47 Rb+ Sr2+ In3+ Sn4+ Sb5+ r/pm 148 113 81 71 62 Cs+ Ba2+ T13+ Pb4+ Bi5+ r/pm,169 135 95 84 74 more obvious less obvious
③ The properties of last three p-block elements in the same group (elements in the 4th, 5th and 6th rows) change soft-progressively (due to insertion of d-block and f-block). K+ Ca2+ Ga3+ Ge4+ As5+ r/pm 133 99 62 53 47 Rb+ Sr2+ In3+ Sn4+ Sb5+ r/pm 148 113 81 71 62 Cs+ Ba2+ Tl3+ Pb4+ Bi5+ r/pm 169 135 95 84 74 more obvious less obvious
having various oxidation numbers Outer electron configurations:ns2npl~5 Example:The oxidation numbers of chlorine are+1,+3,+5,+7,-1,0。 Inert electron pair effect(惰性电子对效应)： The compounds of ELEMENTS of low oxidation number are more stable than those of high oxidation number when descending in the same groups 同族元素从上到下，低氧化值化合物比高氧化值化合物变得更稳定
Outer electron configurations：ns 2np 1 ~ 5 Example：The oxidation numbers of chlorine are +1，+3，+5，+7，-1，0。 Inert electron pair effect (惰性电子对效应)： ◆ having various oxidation numbers The compounds of ELEMENTS of low oxidation number are more stable than those of high oxidation number when descending in the same groups 同族元素从上到下，低氧化值化合物比高氧化值化合物变得更稳定
Example: Si(ID)Pb(IV))in light of stability electron configurations are Xe]6s2 (inert electron pair effect for Pb(II)and [Xe]for Pb(IV),respectively Large electronegativity,forming covalent compounds
Example： Si(II) Pb(IV) ) in light of stability electron configurations are [Xe]6s2 (Inert electron pair effect ) for Pb(II) and [Xe] for Pb(IV), respectively. ◆ Large electronegativity, forming covalent compounds
13.2 The elements of boron family 13.2.1 Outline on boron family >13.2.2 The elemental substances of boron family 13.2.3 The compounds of boron -*13.2.4 The compounds of aluminum
§ 13.2 The elements of boron family *13.2.4 The compounds of aluminum 13.2.3 The compounds of boron 13.2.2 The elemental substances of boron family 13.2.1 Outline on boron family
13.2.1 Outline on boron family Boron family (IA):B,Al,Ga,In,TI Valence electron configuration:ns2npl Electron deficient elements:number of valence electrons number of valence orbits Electron deficient compounds:number of electron pairs in bonding molecular orbits number of valence orbits(即：还有空的成键轨道) Example:BF3(sp3),H3BO3.B:2S22pl HBF is not electron deficient compound
13.2.1 Outline on boron family Boron family (ⅢA)：B，Al，Ga，In，Tl Valence electron configuration：ns 2np 1 Electron deficient elements: number of valence electrons < number of valence orbits Electron deficient compounds: number of electron pairs in bonding molecular orbits < number of valence orbits(即：还有空的成键轨道). Example：BF3 (sp3 ), H3BO3。 B: 2S22p1 HBF4 is not electron deficient compound
2p 2P excited 2s $p2 B:2s22p1 sp2 hybridization The formation of BF
of BF3 The formation 2s 2p 2p 2s sp 2 sp2 hybridization B ： 2s 22p 1 excited